Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes
- Seoane, N.
- Aldegunde, M.
- Nagy, D.
- Elmessary, M.A.
- Indalecio, G.
- García-Loureiro, A.J.
- Kalna, K.
ISSN: 1361-6641, 0268-1242
Year of publication: 2016
Volume: 31
Issue: 7
Type: Article