Impact of cross-section of 10.4 nm gate length Ino.53Gao.47As FinFETs on metal grain variability

  1. Seoane, N.
  2. Indalecio, G.
  3. Garcla-Loureiro, A.J.
  4. Kalna, K.
Proceedings:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

ISBN: 9781509008179

Year of publication: 2016

Pages: 241-244

Type: Conference paper

DOI: 10.1109/SISPAD.2016.7605192 GOOGLE SCHOLAR
Data source: Scopus