Variability in Si nanowire MOSFETs due to the combined effect of interface roughness and random dopants: A fully three-dimensional NEGF simulation study

  1. Martinez, A.
  2. Seoane, N.
  3. Brown, A.R.
  4. Barker, J.R.
  5. Asenov, A.
Journal:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year of publication: 2010

Volume: 57

Issue: 7

Pages: 1626-1635

Type: Article

DOI: 10.1109/TED.2010.2048405 GOOGLE SCHOLAR
Data source: Scopus