Current variability in Si nanowire MOSFETs due to random dopants in the source/drain regions: A fully 3-D NEGF simulation study

  1. Seoane, N.
  2. Martinez, A.
  3. Brown, A.R.
  4. Barker, J.R.
  5. Asenov, A.
Journal:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year of publication: 2009

Volume: 56

Issue: 7

Pages: 1388-1395

Type: Article

DOI: 10.1109/TED.2009.2021357 GOOGLE SCHOLAR
Data source: Scopus